| Type/Dopant | Semi-Insulated | P-Type/Zn | N-Type/Si | N-Type/Si |
| Application | Micro Eletronic | LED | Laser Diode | |
| Growth Method | VGF | |||
| Diameter | 2", 3", 4", 6" | |||
| Orientation(100)±0.5° | (100)±0.5° | |||
| Thickness | 350-625um±25um | |||
| OF/IF | US EJ or Notch | |||
| Carrier Concentration | - | (0.5-5)*1019 | (0.4-4)*1018 | (0.4-0.25)*1018 |
| Resistivity (ohm-cm) | >107 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 |
| Mobility (cm2/V.S.) | >4000 | 50-120 | >1000 | >1500 |
| Etch Pitch Density (/cm2) | <5000 | <5000 | <5000 | <500 |
| TTV [P/P] (µm) | <5 | |||
| TTV [P/E] (µm) | <10 | |||
| Warp (µm) | <10 | |||
| Surface Finished | P/P, P/E, E/E | |||
| Note: | Other Specifications maybe available upon request | |||