| Type | Semi-Insulated | N-Type | P-Type | NP Type |
| Dopant | Fe | S, Sn | Zn | Undoped |
| Growth Method | VGF | |||
| Diameter | 2", 3", 4", 6" | |||
| Orientation | (100)±0.5° | |||
| Thickness (µm) | 350-675um ±25um | |||
| OF/IF | US EJ | |||
| Carrier Concentration | - | (0.8-8)*1018 | (0.8-8)*1018 | (1-10)*1015 |
| Resistivity (ohm-cm) | >0.5*107 | - | - | - |
| Mobility (cm2/V.S.) | >1000 | 1000-2500 | 50-100 | 3000-5000 |
| Etch Pitch Density (/cm2) | <5000 | <5000 | <500 | <500 |
| TTV [P/P] (µm) | <10 | |||
| TTV [P/E] (µm) | <15 | |||
| Warp (µm) | <15 | |||
| Surface Finished | P/P, P/E, E/E | |||